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? 2005-2013 microchip technology inc. ds21946b-page 1 tc4421a/tc4422a features ? high peak output current: 10a (typ.) ? low shoot-through/cross-conduction current in output stage ? wide input supply voltage operating range: - 4.5v to 18v ? high continuous output current: 2a (max.) ? matched fast rise and fall times: - 15 ns with 4,700 pf load - 135 ns with 47,000 pf load ? matched short propagation delays: 42 ns (typ.) ? low supply current: - with logic ? 1 ? input ? 130 a (typ.) - with logic ? 0 ? input ? 33 a (typ.) ? low output impedance: 1.2 ? (typ.) ? latch-up protected: will withstand 1.5a output reverse current ? input will withstand negative inputs up to 5v ? pin-compatible with the tc4420/tc4429 and tc4421/tc4422 mosfet drivers ? space-saving, thermally-enhanced, 8-pin dfn package applications ? line drivers for extra heavily-loaded lines ? pulse generators ? driving the largest mosfets and igbts ? local power on/off switch ? motor and solenoid driver ? lf initiator general description the tc4421a/tc4422a are improved versions of the earlier tc4421/tc4422 family of single-output mosfet drivers. these devices are high-current buf- fer/drivers capable of driving large mosfets and insu- lated gate bipolar transistors (igbts). the tc4421a/tc4422a have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. the tc4421a/tc4422a devices also have very low cross-conduction current, reducing the overall power dissipation of the device. these devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. they cannot be latched under any conditions within their power and voltage ratings. these parts are not subject to damage or improper operation when up to 5v of ground bounce is present on their ground terminals. they can accept, without damage or logic upset, more than 1a inductive current of either polarity being forced back into their outputs. in addition, all terminals are fully protected against up to 4 kv of electrostatic discharge. the tc4421a/tc4422a inputs may be driven directly from either ttl or cmos (3v to 18v). in addition, 300 mv of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. with both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the tc4421a/tc4422a family of 9a mosfet drivers fit into most any application where high gate/line capacitance drive is required. package types (1) 8-pin 1 2 3 4 v dd 5 6 7 8 output gnd v dd input nc gnd output tc4421a tc4422a 5-pin to-220 v dd gnd input gnd output tc4421a tc4422a ta b i s common to v dd note 1: duplicate pins must both be connected for proper operation. 2: exposed pad of the dfn package is electrically isolated. tc4421a tc4422a v dd output gnd output pdip/soic 8-pin dfn (2) v dd input nc gnd 2 3 4 5 6 7 8 1 tc4421a tc4422a v dd output gnd output tc4421a tc4422a v dd output gnd output 9a high-speed mosfet drivers
tc4421a/tc4422a ds21946b-page 2 ? 2005-2013 microchip technology inc. functional block diagram effective input output input gnd v dd 300 mv 4.7v tc4421a c = 25 pf tc4422a inverting non-inverting 130 a cross-conduction reduction and pre-drive circuitry output
? 2005-2013 microchip technology inc. ds21946b-page 3 tc4421a/tc4422a 1.0 electrical characteristics absolute maximum ratings ? supply voltage ..................................................... +20v input voltage .................... (v dd + 0.3v) to (gnd ? 5v) input current (v in > v dd )................................... 50 ma ? stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the spec ifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise noted, t a = +25c with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions input logic ? 1 ?, high input voltage v ih 2.4 1.8 ? v logic ? 0 ?, low input voltage v il ?1.30.8v input current i in ?10 ? +10 a 0v ??? v in ??? v dd input voltage v in ?5 ? v dd ? 0.3 v output high output voltage v oh v dd ? 0.025 ? ? v dc test low output voltage v ol ? ? 0.025 v dc test output resistance, high r oh ?1.251.5 ? i out = 10 ma, v dd = 18v output resistance, low r ol ?0.81.1 ? i out = 10 ma, v dd = 18v peak output current i pk ?10.0?av dd = 18v continuous output current i dc 2 ? ? a 10v ?? v dd ? 18v, t a = +25c ( tc4421a/tc4422a cat only) (note 2) latch-up protection withstand reverse current i rev ? >1.5 ? a duty cycle ???? 2%, t ??? 300 sec switching time (note 1) rise time t r ?2834ns figure 4-1 , c l = 10,000 pf fall time t f ?2632ns figure 4-1 , c l = 10,000 pf propagation delay time t d1 ?3845ns figure 4-1 , c l = 10,000 pf propagation delay time t d2 ?4249ns figure 4-1 , c l = 10,000 pf power supply power supply current i s ? 130 250 a v in = 3v ?35100av in = 0v operating input voltage v dd 4.5 ? 18 v note 1: switching times ensured by design. 2: tested during characterization, not production tested.
tc4421a/tc4422a ds21946b-page 4 ? 2005-2013 microchip technology inc. dc characteristics (over operating temperature range) temperature characteristics electrical specifications: unless otherwise noted, over operating temperature range with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions input logic ? 1 ?, high input voltage v ih 2.4 ? ? v logic ? 0 ?, low input voltage v il ??0.8v input current i in ?10 ? +10 a 0v ??? v in ??? v dd output high output voltage v oh v dd ? 0.025 ? ? v dc test low output voltage v ol ??0.025vdc test output resistance, high r oh ??2.0 ? i out = 10 ma, v dd = 18v output resistance, low r ol ??1.6 ? i out = 10 ma, v dd = 18v switching time (note 1) rise time t r ?3845ns figure 4-1 , c l = 10,000 pf fall time t f ?3340ns figure 4-1 , c l = 10,000 pf propagation delay time t d1 ?50.460ns figure 4-1 , c l = 10,000 pf propagation delay time t d2 ?5360ns figure 4-1 , c l = 10,000 pf power supply power supply current i s ? 200 500 a v in = 3v ? 50 150 a v in = 0v operating input voltage v dd 4.5 ? 18 v note 1: switching times ensured by design. electrical specifications: unless otherwise noted, all parameters apply with 4.5v ? v dd ? 18v. parameters sym min typ max units conditions temperature ranges specified temperature range (v) t a ?40 ? +125 c maximum junction temperature t j ? ? +150 c storage temperature range t a ?65 ? +150 c package thermal resistances thermal resistance, 5l-to-220 ? ja ? 71 ? c/w without heat sink thermal resistance, 8l-6x5 dfn ? ja ? 33.2 ? c/w typical 4-layer board with vias to ground plane thermal resistance, 8l-pdip ? ja ?125?c/w thermal resistance, 8l-soic ? ja ?155?c/w
? 2005-2013 microchip technology inc. ds21946b-page 5 tc4421a/tc4422a 2.0 typical performance curves note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: fall time vs. supply voltage. figure 2-4: fall time vs. capacitive load. figure 2-5: rise and fall times vs. temperature. figure 2-6: crossover energy vs supply voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0 20 40 60 80 100 120 140 160 180 4 6 8 1012141618 supply voltage (v) rise time (ns) 22,000 pf 10,000 pf 1,000 pf 100 pf 0 50 100 150 200 250 300 100 1000 10000 100000 capacitive load (pf) rise time (ns) 5v 10v 15v 0 20 40 60 80 100 120 140 160 180 4 6 8 10 12 14 16 18 supply voltage (v) fall time (ns) 22,000 pf 10,000 pf 1,000 pf 100 pf 0 50 100 150 200 250 300 100 1000 10000 100000 capacitive load (pf) fall time (ns) 5v 15v 10v 20 25 30 35 40 45 50 55 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) time (ns) t rise t fall v dd = 15v 1e-9 1e-8 1e-7 4 6 8 10 12 14 16 18 supply voltage (v) crossover energy (asec) 10 -7 10 -8 10 -9
tc4421a/tc4422a ds21946b-page 6 ? 2005-2013 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-7: propagation delay vs. supply voltage. figure 2-8: propagation delay vs. input amplitude. figure 2-9: propagation delay vs. temperature. figure 2-10: quiescent supply current vs. supply voltage. figure 2-11: quiescent supply current vs. temperature. figure 2-12: input threshold vs. temperature. 30 35 40 45 50 55 60 65 70 75 80 4 6 8 10 12 14 16 18 supply voltage (v) propagation delay (ns) t d2 t d1 c load = 10,000 pf 40 45 50 55 60 65 70 75 2345678910 input amplitude (v) propagation delay (ns) t d1 t d2 v dd = 12v 30 35 40 45 50 55 60 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) propagation delay (ns) t d2 t d1 v dd = 12v v in = 5v c load = 10,000 pf 20 40 60 80 100 120 140 4 6 8 10 12 14 16 18 supply voltage (v) i quiescent (a) input = high input = low 20 40 60 80 100 120 140 160 180 200 220 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) i quiescent (a) input = low input = high v dd = 18v 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) input threshold (v) v ih v il v dd = 12v
? 2005-2013 microchip technology inc. ds21946b-page 7 tc4421a/tc4422a note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-13: input threshold vs. supply voltage. figure 2-14: high-state output resistance vs. supply voltage. figure 2-15: low-state output resistance vs. supply voltage. figure 2-16: supply current vs. capactive load (v dd = 18v). figure 2-17: supply current vs. capactive load (v dd = 12v). figure 2-18: supply current vs. capactive load (v dd = 6v). 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 4 6 8 1012141618 supply voltage (v) input threshold (v) v ih v il 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 6 8 1012141618 supply voltage (v) r out-hi ( ) t j = 25c t j = 150c v in = 5v (tc4422a) v in = 0v (tc4421a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 6 8 1012141618 supply voltage (v) r out-lo ( ) t j = 25c t j = 150c v in = 0v (tc4422a) v in = 5v (tc4421a) 0 20 40 60 80 100 120 140 160 180 100 1,000 10,000 100,000 capacitive load (pf) supply current (ma) 2 mhz 1 mhz 200 khz 100 khz 50 khz 10 khz v dd = 18v 0 20 40 60 80 100 120 140 160 180 200 100 1,000 10,000 100,000 capacitive load (pf) supply current (ma) 2 mhz 1 mhz 200 khz 100 khz 50 khz 10 khz v dd = 12v 0 20 40 60 80 100 120 140 160 180 200 220 100 1,000 10,000 100,000 capacitive load (pf) supply current (ma) 2 mhz 1 mhz 200 khz 100 khz 50 khz 10 khz v dd = 6v
tc4421a/tc4422a ds21946b-page 8 ? 2005-2013 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v ? v dd ? 18v. figure 2-19: supply current vs. frequency (v dd = 18v). figure 2-20: supply current vs. frequency (v dd = 12v). figure 2-21: supply current vs. frequency (v dd = 6v). 0 20 40 60 80 100 120 140 160 180 10 100 1000 10000 frequency (khz) supply current (ma) v dd = 18v 470 pf 1000 pf 10,000 pf 22,000 pf 47,000 pf 0.1 f 0 20 40 60 80 100 120 140 160 180 200 10 100 1000 10000 frequency (khz) supply current (ma) 470 pf 1000 pf 10,000 pf 22,000 pf 47,000 pf 0.1 f v dd = 12v 0 20 40 60 80 100 120 140 160 180 200 220 10 100 1000 10000 frequency (khz) supply current (ma) 470 pf 1000 pf 10,000 pf 22,000 pf 47,000 pf 0.1 f v dd = 6v
? 2005-2013 microchip technology inc. ds21946b-page 9 tc4421a/tc4422a 3.0 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: pin function table 3.1 supply input (v dd ) the v dd input is the bias supply for the mosfet driver and is rated for 4.5v to 18v with respect to the ground pin. the v dd input should be bypassed to ground with a local ceramic capacitor. the value of the capacitor should be chosen based on the capacitive load that is being driven. a minimum value of 1.0 f is suggested. 3.2 control input the mosfet driver input is a high-impedance, ttl/cmos-compatible input. the input also has 300 mv of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. 3.3 cmos push-pull output the mosfet driver output is a low-impedance, cmos, push-pull style output capable of driving a capacitive load with 9.0a peak currents. the mosfet driver output is capable of withstanding 1.5a peak reverse currents of either polarity. 3.4 ground the ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. the ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 exposed metal pad the exposed metal pad of the 6x5 dfn package is not internally connected to any potential. therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board (pcb) to aid in heat removal from the package. 3.6 metal tab the metal tab of the to-220 package is connected to the v dd potential of the device. this connection to v dd can be used as a current carrying path for the device. pin no. 8-pin pdip, soic pin no. 8-pin dfn pin no. 5-pin to-220 symbol description 11?v dd supply input, 4.5v to 18v 2 2 1 input control input, ttl/cmos-compatible input 3 3 ? nc no connection 4 4 2 gnd ground 5 5 4 gnd ground 6 6 5 output cmos push-pull output 7 7 ? output cmos push-pull output 883v dd supply input, 4.5v to 18v ?pad? ncexposed metal pad ??tabv dd metal tab is at the v dd potential
tc4421a/tc4422a ds21946b-page 10 ? 2005-2013 microchip technology inc. 4.0 applications information figure 4-1: switching time test circuits. inverting driver non-inverting driver input t d1 tf t r t d2 input: 100 khz, square wave, t rise = t fall ? 10 nsec output input output t d1 t f t r t d2 +5v 10% 90% 10% 90% 10% 90% +18v 0v 90% 10% 10% 10% 90% +5v +18v 0v 0v 0v 90% 26 7 5 4 1 8 c l = 10,000 pf 0.1 f 4.7 f input v dd = 18v output 0.1 f tc4421a tc4422a note: pinout shown is for the dfn, pdip and soic packages. v dd v dd input gnd gnd output output
? 2005-2013 microchip technology inc. ds21946b-page 11 tc4421a/tc4422a 5.0 packaging information 5.1 package marking information xxxxxxxx xxxxxnnn yyww 8-lead pdip (300 mil) example: tc4421a pa ^ 256 0514 5-lead to-220 xxxxxxxxx xxxxxxxxx yywwnnn example: tc4421a xxxxxxxxx 0514256 vat ^^ legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 8-lead dfn example : tc4421a vmf ^ 0514 256 8-lead soic (150 mil) example : xxxxxxxx xxxxyyww nnn tc4421a sn 0514 256 3 e 3 e 3 e 3 e xxxxxxx xxxxxxx xxyyww nnn
tc4421a/tc4422a ds21946b-page 12 ? 2005-2013 microchip technology inc. 5-lead plastic transistor outline (at) (to-220) l h1 q e b e1 e c1 j1 f a d a (5x) ?p ejector pin e3 drawing no. c04-036 notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010" (0.254mm) per side. jedec equivalent: to-220 *controlling parameter mold draft angle lead width lead thickness a c1 b .014 dimension limits overall height lead length overall width lead pitch a l e .540 min e units .060 inches* .022 0.36 0.56 millimeters .190 .560 13.72 min max 4.83 14.22 max .160 4.06 3 7 3 7 overall length d 1.02 0.64 .040 .025 overall lead centers e1 .263 .385 .560 .273 6.68 6.93 .072 1.52 1.83 .415 9.78 10.54 .590 14.22 14.99 through hole diameter p .146 .156 3.71 3.96 j1 base to bottom of lead .090 2.29 .115 2.92 through hole center q .103 2.87 .113 2.62 flag thickness f .045 1.40 .055 1.14 flag length h1 .234 6.55 .258 5.94 space between leads e3 .030 1.02 .040 0.76 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2005-2013 microchip technology inc. ds21946b-page 13 tc4421a/tc4422a 8-lead plastic dual flat no lead package (mf) 6x5 mm body (dfn-s) ? saw singulated note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc4421a/tc4422a ds21946b-page 14 ? 2005-2013 microchip technology inc. 8-lead plastic dual in-line (pa) ? 300 mil (pdip) b1 b a1 a l a2 p ? e eb ? c e1 n d 1 2 units inches* millimeters dimension limits min nom max min nom max number of pins n 88 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .360 .373 .385 9.14 9.46 9.78 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top ? 5 10 15 5 10 15 mold draft angle bottom ? 5 10 15 5 10 15 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed jedec equivalent: ms-001 drawing no. c04-018 .010? (0.254mm) per side. significant characteristic note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2005-2013 microchip technology inc. ds21946b-page 15 tc4421a/tc4422a 8-lead plastic small outline (oa) ? narrow, 150 mil (soic) foot angle ? 048048 15 12 0 15 12 0 ? mold draft angle bottom 15 12 0 15 12 0 ? mold draft angle top 0.51 0.42 0.33 .020 .017 .013 b lead width 0.25 0.23 0.20 .010 .009 .008 c lead thickness 0.76 0.62 0.48 .030 .025 .019 l foot length 0.51 0.38 0.25 .020 .015 .010 h chamfer distance 5.00 4.90 4.80 .197 .193 .189 d overall length 3.99 3.91 3.71 .157 .154 .146 e1 molded package width 6.20 6.02 5.79 .244 .237 .228 e overall width 0.25 0.18 0.10 .010 .007 .004 a1 standoff 1.55 1.42 1.32 .061 .056 .052 a2 molded package thickness 1.75 1.55 1.35 .069 .061 .053 a overall height 1.27 .050 p pitch 8 8 n number of pins max nom min max nom min dimension limits millimeters inches* units 2 1 d n p b e e1 h l ? c 45 ? ? a2 ? a a1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-012 drawing no. c04-057 significant characteristic note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc4421a/tc4422a ds21946b-page 16 ? 2005-2013 microchip technology inc. notes:
? 2005-2013 microchip technology inc. ds21946b-page 17 tc4421a/tc4422a appendix a: revision history revision a (may 2005) ? original release of this document. revision b (january 2013) added a note to each package outline drawing.
tc4421a/tc4422a ds21946b-page 18 l ? 2005-2013 microchip technology inc. notes:
? 2005-2013 microchip technology inc. ds21946b-page 19 tc4421a/tc4422a product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: tc4421a: 9a high-speed mosfet driver, inverting tc4422a: 9a high-speed mosfet driver, non-inverting temperature range: v = -40c to +125c package: * at = to-220, 5-lead mf = dual, flat, no-lead (6x5 mm body), 8-lead mf713 = dual, flat, no-lead (6x5 mm body), 8-lead (tape and reel) pa = plastic dip (300 mil body), 8-lead oa = plastic soic (150 mil body), 8-lead oa713 = plastic soic (150 mil body), 8-lead (tape and reel) *all package offerings are pb free (lead free). part no. x xx package temperature range device examples: a) tc4421avat: 9a high-speed inverting mosfet driver, to-220 package, -40c to +125c. b) tc4421avoa: 9a high-speed inverting mosfet driver, soic package, -40c to +125c. c) tc4421avmf: 9a high-speed inverting mosfet driver, dfn package, -40c to +125c. a) tc4422avpa: 9a high-speed non-inverting mosfet driver, pdip package, -40c to +125c. b) tc4422avoa: 9a high-speed non-inverting mosfet driver, soic package, -40c to +125c. c) tc4422avmf: 9a high-speed non-inverting mosfet driver, dfn package, -40c to +125c. xxx tape & reel
tc4421a/tc4422a ds21946b-page 20 ? 2005-2013 microchip technology inc. notes:
? 2005-2013 microchip technology inc. ds21946b-page 21 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2005-2013, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620769218 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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